The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

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dc.contributor.authorKamnev, Kirillcs
dc.contributor.authorPytlíček, Zdeněkcs
dc.contributor.authorBendová, Máriacs
dc.contributor.authorPrášek, Jancs
dc.contributor.authorGispert-Guirado, Francesccs
dc.contributor.authorLlobet, Eduardcs
dc.contributor.authorMozalev, Alexandercs
dc.coverage.issue1cs
dc.coverage.volume24cs
dc.date.accessioned2023-07-24T11:00:16Z
dc.date.available2023-07-24T11:00:16Z
dc.date.issued2023-12-31cs
dc.description.abstractThe need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95-480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF center dot cm(-2), the loss tangent of 4 center dot 10(-3) at frequencies up to 1 MHz, the leakage current density of 40 pA center dot cm(-2), the breakdown field strength of up to 10 MV center dot cm(-1), the energy density of 100 J center dot cm(-3), the quadratic voltage coefficient of capacitance of 4 ppm center dot V-2, and the temperature coefficient of capacitance of 480 ppm center dot K-1 at 293-423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.en
dc.formattextcs
dc.format.extent1-17cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationScience and Technology of Advanced Materials. 2023, vol. 24, issue 1, p. 1-17.en
dc.identifier.doi10.1080/14686996.2022.2162324cs
dc.identifier.issn1878-5514cs
dc.identifier.orcid0000-0001-8999-5363cs
dc.identifier.orcid0000-0002-9116-7740cs
dc.identifier.orcid0000-0003-1228-5712cs
dc.identifier.orcid0000-0002-9505-5359cs
dc.identifier.other184117cs
dc.identifier.researcheridAAC-6166-2019cs
dc.identifier.researcheridE-2387-2012cs
dc.identifier.researcheridH-3928-2012cs
dc.identifier.scopus57193340784cs
dc.identifier.scopus56845730100cs
dc.identifier.scopus7003947942cs
dc.identifier.scopus6601972151cs
dc.identifier.urihttp://hdl.handle.net/11012/213606
dc.language.isoencs
dc.publisherTaylor & Franciscs
dc.relation.ispartofScience and Technology of Advanced Materialscs
dc.relation.urihttps://www.tandfonline.com/doi/full/10.1080/14686996.2022.2162324cs
dc.rightsCreative Commons Attribution-NonCommercial 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1878-5514/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/cs
dc.subjectAnodizingen
dc.subjectporous anodic aluminaen
dc.subjectAl2O3-ZrO2en
dc.subjectnanocomposite filmsen
dc.subjectMIM capacitorsen
dc.subjectdielectricen
dc.subjectintegrated passivesen
dc.titleThe planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integrationen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-184117en
sync.item.dbtypeVAVen
sync.item.insts2023.09.11 12:56:04en
sync.item.modts2023.09.11 12:14:39en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Laserová spektroskopiecs
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