Obtaining Thin Films Of Aln By Atomic Layer
Deposition Using Nh3 Or N2h4 As Precursors

Dallaev, Rashid

Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors

but.event.date	26.04.2018	cs
but.event.title	Student EEICT 2018	cs
dc.contributor.author	Dallaev, Rashid
dc.date.accessioned	2019-03-04T10:05:57Z
dc.date.available	2019-03-04T10:05:57Z
dc.date.issued	2018	cs
dc.description.abstract	In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(diethylamido)aluminum (III) (TDEAA) with hydrazine (N2H4) or ammonia (NH3) as precursors. Elemental analysis of the film deposited by ALD TDEAA /N2H4 at 200 °C showed the presence of carbon impurities ~ 1.4 at%, oxygen ~ 3.2 at.% and hydrogen 22.6 at.%. The atomic concentration ratio of N/Al was ~ 1.3. The residual impurities content with N2H4 was lower than with NH3. In general, it has been confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.	en
dc.format	text	cs
dc.format.extent	503-507	cs
dc.format.mimetype	application/pdf	en
dc.identifier.citation	Proceedings of the 24th Conference STUDENT EEICT 2018. s. 503-507. ISBN 978-80-214-5614-3	cs
dc.identifier.isbn	978-80-214-5614-3
dc.identifier.uri	http://hdl.handle.net/11012/138285
dc.language.iso	en	cs
dc.publisher	Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.relation.ispartof	Proceedings of the 24th Conference STUDENT EEICT 2018	en
dc.relation.uri	http://www.feec.vutbr.cz/EEICT/	cs
dc.rights	© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.rights.access	openAccess	en
dc.subject	atomic layer deposition	en
dc.subject	aluminum nitride	en
dc.subject	wide band-gap	en
dc.subject	thin films fabrication	en
dc.subject	semiconucting materials	en
dc.subject	hydrazine	en
dc.subject	ammonia	en
dc.subject	tris(diethylamido)aluminum.	en
dc.title	Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors	en
dc.type.driver	conferenceObject	en
dc.type.status	Peer-reviewed	en
dc.type.version	publishedVersion	en
eprints.affiliatedInstitution.department	Fakulta elektrotechniky a komunikačních technologií	cs

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