Statistics for Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors
Total visits
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| Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors | 213 |
Total visits per month
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| May 2025 | 0 |
| June 2025 | 0 |
| July 2025 | 0 |
| August 2025 | 0 |
| September 2025 | 0 |
| October 2025 | 0 |
| November 2025 | 0 |
File Visits
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| eeict2018-503.pdf(legacy) | 215 |
| eeict2018-503.pdf | 100 |
Top country views
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| United States | 109 |
| Germany | 18 |
| Czechia | 17 |
| China | 12 |
| France | 9 |
| Sweden | 8 |
| Ireland | 5 |
| United Kingdom | 4 |
| Canada | 3 |
| Vietnam | 3 |
| South Korea | 2 |
| Japan | 1 |
| Russia | 1 |
| Taiwan | 1 |
| Ukraine | 1 |
Top city views
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| Ann Arbor | 20 |
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| Dearborn | 5 |
| Hanoi | 3 |
| Houston | 3 |
| Cambridge | 2 |
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| Guangzhou | 2 |
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| Ottawa | 2 |
| Shenzhen | 2 |
| Beijing | 1 |
| Chaoyang | 1 |
| Chongqing | 1 |
| Hangyang | 1 |
| Langfang | 1 |
| Raleigh | 1 |
| San Diego | 1 |
| Seattle | 1 |
| Shanghai | 1 |
| Xian | 1 |
| Zhengzhou | 1 |