Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors

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eeict2018-503.pdf(656.45 KB)
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2018
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(diethylamido)aluminum (III) (TDEAA) with hydrazine (N2H4) or ammonia (NH3) as precursors. Elemental analysis of the film deposited by ALD TDEAA /N2H4 at 200 °C showed the presence of carbon impurities ~ 1.4 at%, oxygen ~ 3.2 at.% and hydrogen 22.6 at.%. The atomic concentration ratio of N/Al was ~ 1.3. The residual impurities content with N2H4 was lower than with NH3. In general, it has been confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.
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atomic layer deposition, aluminum nitride, wide band-gap, thin films fabrication, semiconucting materials, hydrazine, ammonia, tris(diethylamido)aluminum.
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Proceedings of the 24th Conference STUDENT EEICT 2018. s. 503-507. ISBN 978-80-214-5614-3
http://www.feec.vutbr.cz/EEICT/
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Peer-reviewed
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
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http://hdl.handle.net/11012/138285
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Student EEICT 2018
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