Infinite selectivity of wet SiO2 etching in respect to Al

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dc.contributor.authorGablech, Imrichcs
dc.contributor.authorBrodský, Jancs
dc.contributor.authorPekárek, Jancs
dc.contributor.authorNeužil, Pavelcs
dc.coverage.issue4cs
dc.coverage.volume11cs
dc.date.accessioned2020-08-04T11:03:51Z
dc.date.available2020-08-04T11:03:51Z
dc.date.issued2020-03-31cs
dc.description.abstractWe propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent attack of the Al layer, achieving an outstanding etch rate of thermally grown SiO2 of 1 µm·min1. We also verified that this etching solution only minimally affected the Al layer, as the chip immersion for 9 min increased the Al layer sheet resistance by only 7.6%. The proposed etching method was performed in an ordinary fume hood in a polytetrafluorethylene beaker at elevated temperature of 70 °C using water bath on a hotplate. It allowed removal of the SiO2 sacrificial layer in the presence of Al without the necessity of handling highly toxic HF gas.en
dc.formattextcs
dc.format.extent365-371cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationMicromachines. 2020, vol. 11, issue 4, p. 365-371.en
dc.identifier.doi10.3390/mi11040365cs
dc.identifier.issn2072-666Xcs
dc.identifier.other163196cs
dc.identifier.urihttp://hdl.handle.net/11012/186781
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofMicromachinescs
dc.relation.urihttps://www.mdpi.com/2072-666X/11/4/365cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2072-666X/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectSiO2 etchingen
dc.subjectmicroelectromechanical systems (MEMS)en
dc.subjectsacrificial layeren
dc.subjectselectivityen
dc.titleInfinite selectivity of wet SiO2 etching in respect to Alen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-163196en
sync.item.dbtypeVAVen
sync.item.insts2021.03.09 16:54:33en
sync.item.modts2021.03.09 16:14:17en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-MEL-SIXcs
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