Nanostructures for Achieving Selective Properties of a Thermophotovoltaic Emitter

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dc.contributor.authorŠimonová, Luciecs
dc.contributor.authorMatějka, Milancs
dc.contributor.authorKnápek, Alexandrcs
dc.contributor.authorKrálík, Tomášcs
dc.contributor.authorPokorná, Zuzanacs
dc.contributor.authorMika, Filipcs
dc.contributor.authorFořt, Tomášcs
dc.contributor.authorMan, Ondřejcs
dc.contributor.authorŠkarvada, Pavelcs
dc.contributor.authorOtáhal, Alexandrcs
dc.contributor.authorČudek, Pavelcs
dc.coverage.issue9cs
dc.coverage.volume11cs
dc.date.accessioned2021-10-21T22:57:21Z
dc.date.available2021-10-21T22:57:21Z
dc.date.issued2021-08-19cs
dc.description.abstractThis paper focuses on the research and development of a suitable method for creating a selective emitter for the visible and near-infrared region to be able to work optimally together with silicon photovoltaic cells in a thermophotovoltaic system. The aim was to develop a new method to create very fine structures beyond the conventional standard (nanostructures), which will increase the emissivity of the base material for it to match the needs of a selective emitter for the VIS and NIR region. Available methods were used to create the nanostructures, from which we eliminated all unsuitable methods; for the selected method, we established the optimal procedure and parameters for their creation. The development of the emitter nanostructures included the necessary substrate pretreatments, where great emphasis was placed on material purity and surface roughness. Tungsten was purposely chosen as the main material for the formation of the nanostructures; we verified the effect of the formed structure on the resulting emissivity. This work presents a new method for the formation of nanostructures, which are not commonly formed in such fineness; by this, it opens the way to new possibilities for achieving the desired selectivity of the thermophotovoltaic emitter.en
dc.formattextcs
dc.format.extent1-14cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNanomaterials. 2021, vol. 11, issue 9, p. 1-14.en
dc.identifier.doi10.3390/nano11092443cs
dc.identifier.issn2079-4991cs
dc.identifier.other172552cs
dc.identifier.urihttp://hdl.handle.net/11012/201642
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofNanomaterialscs
dc.relation.urihttps://www.mdpi.com/2079-4991/11/9/2443cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2079-4991/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectthermophotovoltaicsen
dc.subjectselective emittersen
dc.subjectnanostructuresen
dc.subjectreactive ion etchingen
dc.subjectemissivityen
dc.subjectelectron beam lithographyen
dc.titleNanostructures for Achieving Selective Properties of a Thermophotovoltaic Emitteren
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-172552en
sync.item.dbtypeVAVen
sync.item.insts2021.10.22 00:57:21en
sync.item.modts2021.10.22 00:16:06en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav elektrotechnologiecs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav fyzikycs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
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