Anodic formation of HfO2 nanostructure arrays for resistive switching application

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dc.contributor.authorKamnev, Kirillcs
dc.contributor.authorPytlíček, Zdeněkcs
dc.contributor.authorPrášek, Jancs
dc.contributor.authorMozalev, Alexandercs
dc.date.issued2021-01-01cs
dc.description.abstractThin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability, low operating voltages of resulting devices, and complementary metal-oxide-semiconductor technology compatibility of this material. In this study, we investigate the resistive switching behavior of nanostructured HfO2 film embedded in a porous anodic alumina matrix. The film was synthesized via self-organized electrochemical anodizing of a sputter-deposited Al/Hf bilayer on a Si substrate in an oxalic acid solution. The film was investigated by scanning electron microscopy. Simple metal/insulator/metal devices were prepared by sputter-deposition of Pt top electrodes through a shadow mask onto the nanostructured film. Assembled devices were characterized by I-V measurements. A bipolar eight-wise resistive switching was obtained, demonstrating a highly repeatable and stable low-voltage behavior in a set potential range. The achieved results indicate the high potential of the anodizing technique as an alternative to commonly used methods for producing insulating thin films for resistive random-access memory application.en
dc.formattextcs
dc.format.extent122-126cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationProceedings 12th International Conference on Nanomaterials - Research & Application. 2021, p. 122-126.en
dc.identifier.doi10.37904/nanocon.2020.3692cs
dc.identifier.isbn978-80-87294-98-7cs
dc.identifier.orcid0000-0001-8999-5363cs
dc.identifier.orcid0000-0002-9116-7740cs
dc.identifier.orcid0000-0003-1228-5712cs
dc.identifier.orcid0000-0002-9505-5359cs
dc.identifier.other174112cs
dc.identifier.researcheridAAC-6166-2019cs
dc.identifier.researcheridE-2387-2012cs
dc.identifier.researcheridH-3928-2012cs
dc.identifier.scopus57193340784cs
dc.identifier.scopus56845730100cs
dc.identifier.scopus7003947942cs
dc.identifier.scopus6601972151cs
dc.identifier.urihttp://hdl.handle.net/11012/203206
dc.language.isoencs
dc.publisherTANGER LTDcs
dc.relation.ispartofProceedings 12th International Conference on Nanomaterials - Research & Applicationcs
dc.relation.urihttps://www.confer.cz/nanocon/2020/3692-anodic-formation-of-hfo2-nanostructure-arrays-for-resistive-switching-applicationcs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectResistive switchingen
dc.subjectanodizingen
dc.subjecthafnium oxideen
dc.subjectporous anodic aluminaen
dc.subjectmemristoren
dc.titleAnodic formation of HfO2 nanostructure arrays for resistive switching applicationen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-174112en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:41:07en
sync.item.modts2025.01.17 18:38:51en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
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