A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling
dc.contributor.author | Racko, Juraj | |
dc.contributor.author | Mikolasek, Miroslav | |
dc.contributor.author | Grmanova, Alena | |
dc.contributor.author | Breza, Juraj | |
dc.contributor.author | Benko, Peter | |
dc.contributor.author | Gallo, Ondrej | |
dc.contributor.author | Harmatha, Ladislav | |
dc.coverage.issue | 1 | cs |
dc.coverage.volume | 21 | cs |
dc.date.accessioned | 2015-01-22T09:23:57Z | |
dc.date.available | 2015-01-22T09:23:57Z | |
dc.date.issued | 2012-04 | cs |
dc.description.abstract | The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V curve usually observed in the case of switching diodes and transistors was modeled as a result of the high concentration of traps that assist in the process of tunneling. | en |
dc.format | text | cs |
dc.format.extent | 213-218 | cs |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Radioengineering. 2012, vol. 21, č. 1, s. 213-218. ISSN 1210-2512 | cs |
dc.identifier.issn | 1210-2512 | |
dc.identifier.uri | http://hdl.handle.net/11012/37032 | |
dc.language.iso | en | cs |
dc.publisher | Společnost pro radioelektronické inženýrství | cs |
dc.relation.ispartof | Radioengineering | cs |
dc.relation.uri | http://www.radioeng.cz/fulltexts/2012/12_01_0213_0218.pdf | cs |
dc.rights | Creative Commons Attribution 3.0 Unported License | en |
dc.rights.access | openAccess | en |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
dc.subject | Shockley-Read-Hall model | en |
dc.subject | Schenk model | en |
dc.subject | trap assisted tunneling | en |
dc.subject | pn-junction | en |
dc.subject | I-V curve | en |
dc.title | A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling | en |
dc.type.driver | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |