A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling

Abstract

The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V curve usually observed in the case of switching diodes and transistors was modeled as a result of the high concentration of traps that assist in the process of tunneling.