5 Watt GaN HEMT Power Amplifier for LTE

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dc.contributor.authorNiotaki, Kyriaki
dc.contributor.authorCollado, Ana
dc.contributor.authorGeorgiadis, Apostolos
dc.contributor.authorVardakas, John
dc.coverage.issue1cs
dc.coverage.volume23cs
dc.date.accessioned2014-12-09T11:53:38Z
dc.date.available2014-12-09T11:53:38Z
dc.date.issued2014-04cs
dc.description.abstractThis work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz).en
dc.formattextcs
dc.format.extent338-344cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2014, vol. 23, č. 1, s. 338-344. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/36425
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectACPRen
dc.subjectGaN HEMTen
dc.subjectlinearityen
dc.subjectLTEen
dc.subjectPAPRen
dc.subjectpower amplifieren
dc.title5 Watt GaN HEMT Power Amplifier for LTEen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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