5 Watt GaN HEMT Power Amplifier for LTE
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Date
2014-04
Authors
Niotaki, Kyriaki
Collado, Ana
Georgiadis, Apostolos
Vardakas, John
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz).
Description
Keywords
Citation
Radioengineering. 2014, vol. 23, č. 1, s. 338-344. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf
http://www.radioeng.cz/fulltexts/2014/14_01_0338_0344.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en