The electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency

Abstract

In this investigation, thin films of YbFeO3, both in its pure form and doped with 10% Co, were fabricated on a p-Si substrate at 500 degrees C through the radio-frequency magnetron sputtering method. Examination via Scanning Electron Microscopy demonstrated a porous texture for the pure sample, contrasting with a smooth and crack-free surface post-Co doping. Analysis via X-ray photoelectron spectroscopy unveiled Yb's 3 + oxidation state, alongside the presence of lattice oxygen, oxygen vacancies, and adsorbed oxygen evident in Gaussian fitting curves. Photoluminescence spectroscopy revealed an augmented emission intensity, likely attributed to increased defect initiation in the Co-doped specimen. Moreover, Raman spectroscopy was employed to identify vibration modes in the examined samples, demonstrating shifts in Raman peaks indicative of Co substitution and subsequent distortion in the crystal structure of YbFeO3. Electrical assessments were conducted at room temperature (300 K) under ambient conditions, employing voltage and frequency as variables. Capacitance-voltage measurements illustrated the emergence of an accumulation, with depletion and inversion regions manifesting at different frequencies based on the applied voltage, attributed to the YbFeO3 interfacial layer at the Al and p-Si interface. The conductance-voltage characteristics indicated that the structure exhibited maximum conductance in the accumulation region. Series resistance for these configurations was deduced from capacitance-conductance-voltage measurements, indicating a dependence on both bias voltage and frequency. The doping process led to a reduction in capacitance and series resistance, accompanied by an increase in conductance values. After obtaining corrected capacitance and conductance parameters, it became evident that series resistance significantly influences both parameters. Interface state density (N-ss), determined through the Hill-Coleman relation demonstrated a decreasing trend with increasing frequency. The pure sample exhibited higher interface state density compared to the Co-doped sample at each frequency, highlighting that the 10% Co-doped YbFeO3 thin film enhances the quality of the metal-semiconductor interface properties compared to the pure contact.In this investigation, thin films of YbFeO3, both in its pure form and doped with 10% Co, were fabricated on a p-Si substrate at 500 degrees C through the radio-frequency magnetron sputtering method. Examination via Scanning Electron Microscopy demonstrated a porous texture for the pure sample, contrasting with a smooth and crack-free surface post-Co doping. Analysis via X-ray photoelectron spectroscopy unveiled Yb's 3 + oxidation state, alongside the presence of lattice oxygen, oxygen vacancies, and adsorbed oxygen evident in Gaussian fitting curves. Photoluminescence spectroscopy revealed an augmented emission intensity, likely attributed to increased defect initiation in the Co-doped specimen. Moreover, Raman spectroscopy was employed to identify vibration modes in the examined samples, demonstrating shifts in Raman peaks indicative of Co substitution and subsequent distortion in the crystal structure of YbFeO3. Electrical assessments were conducted at room temperature (300 K) under ambient conditions, employing voltage and frequency as variables. Capacitance-voltage measurements illustrated the emergence of an accumulation, with depletion and inversion regions manifesting at different frequencies based on the applied voltage, attributed to the YbFeO3 interfacial layer at the Al and p-Si interface. The conductance-voltage characteristics indicated that the structure exhibited maximum conductance in the accumulation region. Series resistance for these configurations was deduced from capacitance-conductance-voltage measurements, indicating a dependence on both bias voltage and frequency. The doping process led to a reduction in capacitance and series resistance, accompanied by an increase in conductance values. After obtaining corrected capacitance and conductance parameters, it became evident that series resistance significantly influences both parameters. Interface state density (N-ss), determined through the Hill-Coleman relation demonstrated a decreasing trend with increasing frequency. The pure sample exhibited higher interface state density compared to the Co-doped sample at each frequency, highlighting that the 10% Co-doped YbFeO3 thin film enhances the quality of the metal-semiconductor interface properties compared to the pure contact.