The electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency

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dc.contributor.authorCoskun, Mustafacs
dc.contributor.authorPolat, Özgürcs
dc.contributor.authorOrak, Ikramcs
dc.contributor.authorCoskun, F.M.cs
dc.contributor.authorYildirim, Yucelcs
dc.contributor.authorSobola, Dinaracs
dc.contributor.authorSen, Cengizcs
dc.contributor.authorDurmuş, Zehracs
dc.contributor.authorCaglar, Yasemincs
dc.contributor.authorCaglar, Mujdatcs
dc.contributor.authorTurut, Abduelmecitcs
dc.coverage.issue17cs
dc.coverage.volume35cs
dc.date.accessioned2025-02-03T14:40:38Z
dc.date.available2025-02-03T14:40:38Z
dc.date.issued2024-06-01cs
dc.description.abstractIn this investigation, thin films of YbFeO3, both in its pure form and doped with 10% Co, were fabricated on a p-Si substrate at 500 degrees C through the radio-frequency magnetron sputtering method. Examination via Scanning Electron Microscopy demonstrated a porous texture for the pure sample, contrasting with a smooth and crack-free surface post-Co doping. Analysis via X-ray photoelectron spectroscopy unveiled Yb's 3 + oxidation state, alongside the presence of lattice oxygen, oxygen vacancies, and adsorbed oxygen evident in Gaussian fitting curves. Photoluminescence spectroscopy revealed an augmented emission intensity, likely attributed to increased defect initiation in the Co-doped specimen. Moreover, Raman spectroscopy was employed to identify vibration modes in the examined samples, demonstrating shifts in Raman peaks indicative of Co substitution and subsequent distortion in the crystal structure of YbFeO3. Electrical assessments were conducted at room temperature (300 K) under ambient conditions, employing voltage and frequency as variables. Capacitance-voltage measurements illustrated the emergence of an accumulation, with depletion and inversion regions manifesting at different frequencies based on the applied voltage, attributed to the YbFeO3 interfacial layer at the Al and p-Si interface. The conductance-voltage characteristics indicated that the structure exhibited maximum conductance in the accumulation region. Series resistance for these configurations was deduced from capacitance-conductance-voltage measurements, indicating a dependence on both bias voltage and frequency. The doping process led to a reduction in capacitance and series resistance, accompanied by an increase in conductance values. After obtaining corrected capacitance and conductance parameters, it became evident that series resistance significantly influences both parameters. Interface state density (N-ss), determined through the Hill-Coleman relation demonstrated a decreasing trend with increasing frequency. The pure sample exhibited higher interface state density compared to the Co-doped sample at each frequency, highlighting that the 10% Co-doped YbFeO3 thin film enhances the quality of the metal-semiconductor interface properties compared to the pure contact.en
dc.formattextcs
dc.format.extent1-18cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationJournal of Materials Science: Materials in Electronics. 2024, vol. 35, issue 17, p. 1-18.en
dc.identifier.doi10.1007/s10854-024-12896-8cs
dc.identifier.issn1573-482Xcs
dc.identifier.orcid0000-0002-7410-1272cs
dc.identifier.orcid0000-0002-0008-5265cs
dc.identifier.other189991cs
dc.identifier.researcheridG-1175-2019cs
dc.identifier.scopus57189064262cs
dc.identifier.urihttps://hdl.handle.net/11012/249909
dc.language.isoencs
dc.publisherSpringer Naturecs
dc.relation.ispartofJournal of Materials Science: Materials in Electronicscs
dc.relation.urihttps://link.springer.com/article/10.1007/s10854-024-12896-8cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1573-482X/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectTHIN-FILMSen
dc.subjectMAGNETIC-PROPERTIESen
dc.subjectTEMPERATUREen
dc.titleThe electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequencyen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-189991en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:40:37en
sync.item.modts2025.01.31 07:31:59en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav fyzikycs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Pokročilé keramické materiálycs
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