MOSFET-C transimpedance filters with center frequency tunability feature

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dc.contributor.authorMetin, Bilgincs
dc.contributor.authorBasaran, Yasincs
dc.contributor.authorHerencsár, Norbertcs
dc.contributor.authorFaseehuddin, Mohammadcs
dc.contributor.authorCicekoglu, Oguzhancs
dc.coverage.issue3cs
dc.coverage.volume110cs
dc.date.accessioned2024-03-11T15:46:13Z
dc.date.available2024-03-11T15:46:13Z
dc.date.issued2022-02-28cs
dc.description.abstractIn this paper, seven different MOSFET-C transimpedance filters with their corresponding transfer functions and basic filter specifications, are provided. Presented designs show second-order standard band-pass, low-pass, or high-pass characteristics. Moreover, some filters provide both low-pass and band-pass characteristics. Especially, having a tunability feature makes a design more useful and applicable for various communication and instrumentation systems. The selected filter topology was biased under various biasing conditions to tune central frequency by keeping bandwidth constant. To elaborate the design with different aspects, we checked its small-signal performance by introducing both changing temperature and implementation errors. The theoretical results are in detail verified by numerous simulations using Cadence IC6 Spectre analog design environment. In the design, transistors with 1.8 V supply voltage were used and modelled by the SilTerra Malaysia 180 nm CMOS process parameters. The implemented layout, including metal-insulator-metal on-chip capacitors, occupies an area of 175 mu m x 75 mu m, while the total power consumption of the filter is found to be only 128.86 mu W.en
dc.formattextcs
dc.format.extent496-513cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationInternational Journal of Electronics. 2022, vol. 110, issue 3, p. 496-513.en
dc.identifier.doi10.1080/00207217.2022.2025459cs
dc.identifier.issn1362-3060cs
dc.identifier.orcid0000-0002-9504-2275cs
dc.identifier.other175869cs
dc.identifier.researcheridA-6539-2009cs
dc.identifier.scopus23012051100cs
dc.identifier.urihttps://hdl.handle.net/11012/245271
dc.language.isoencs
dc.publisherTAYLOR & FRANCIS LTDcs
dc.relation.ispartofInternational Journal of Electronicscs
dc.relation.urihttps://www.tandfonline.com/doi/full/10.1080/00207217.2022.2025459cs
dc.rights(C) TAYLOR & FRANCIS LTDcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1362-3060/cs
dc.subjectActive filteren
dc.subjectanalog filteren
dc.subjectband-pass filteren
dc.subjectMOSFET-C filteren
dc.subjectMOS-onlyen
dc.subjectMOSFET-onlyen
dc.titleMOSFET-C transimpedance filters with center frequency tunability featureen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionacceptedVersionen
sync.item.dbidVAV-175869en
sync.item.dbtypeVAVen
sync.item.insts2024.03.11 16:46:13en
sync.item.modts2024.03.11 16:13:36en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav telekomunikacícs
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