Trap-Assisted Tunneling in the Schottky Barrier
| dc.contributor.author | Racko, Juraj | |
| dc.contributor.author | Pechacek, Juraj | |
| dc.contributor.author | Mikolasek, Miroslav | |
| dc.contributor.author | Benko, Peter | |
| dc.contributor.author | Grmanova, Alena | |
| dc.contributor.author | Harmatha, Ladislav | |
| dc.contributor.author | Breza, Juraj | |
| dc.coverage.issue | 1 | cs |
| dc.coverage.volume | 22 | cs |
| dc.date.accessioned | 2015-01-20T14:14:17Z | |
| dc.date.available | 2015-01-20T14:14:17Z | |
| dc.date.issued | 2013-04 | cs |
| dc.description.abstract | The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling. | en |
| dc.format | text | cs |
| dc.format.extent | 240-244 | cs |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Radioengineering. 2013, vol. 22, č. 1, s. 240-244. ISSN 1210-2512 | cs |
| dc.identifier.issn | 1210-2512 | |
| dc.identifier.uri | http://hdl.handle.net/11012/36842 | |
| dc.language.iso | en | cs |
| dc.publisher | Společnost pro radioelektronické inženýrství | cs |
| dc.relation.ispartof | Radioengineering | cs |
| dc.relation.uri | http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf | cs |
| dc.rights | Creative Commons Attribution 3.0 Unported License | en |
| dc.rights.access | openAccess | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
| dc.subject | Trap-assisted | en |
| dc.subject | direct tunneling | en |
| dc.subject | Schottky barrier | en |
| dc.title | Trap-Assisted Tunneling in the Schottky Barrier | en |
| dc.type.driver | article | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |
| eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |