Trap-Assisted Tunneling in the Schottky Barrier
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Date
2013-04
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.
Description
Citation
Radioengineering. 2013, vol. 22, č. 1, s. 240-244. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf
http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf
Document type
Peer-reviewed
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Published version
Date of access to the full text
Language of document
en