About v-i Pinched Hysteresis of Some Non-Memristive Systems
dc.contributor.author | Biolek, Dalibor | cs |
dc.contributor.author | Biolek, Zdeněk | cs |
dc.contributor.author | Biolková, Viera | cs |
dc.contributor.author | Ascoli, Alon | cs |
dc.contributor.author | Tetzlaff, Ronald | cs |
dc.coverage.issue | 1 | cs |
dc.coverage.volume | 2018 | cs |
dc.date.issued | 2018-09-24 | cs |
dc.description.abstract | A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors. | en |
dc.format | text | cs |
dc.format.extent | 1-10 | cs |
dc.format.mimetype | application/pdf | cs |
dc.identifier.citation | MATHEMATICAL PROBLEMS IN ENGINEERING. 2018, vol. 2018, issue 1, p. 1-10. | en |
dc.identifier.doi | 10.1155/2018/1747865 | cs |
dc.identifier.issn | 1024-123X | cs |
dc.identifier.orcid | 0000-0002-7607-6146 | cs |
dc.identifier.orcid | 0000-0003-2589-2722 | cs |
dc.identifier.orcid | 0000-0003-4026-9648 | cs |
dc.identifier.orcid | 0000-0001-7436-0103 | cs |
dc.identifier.other | 150098 | cs |
dc.identifier.researcherid | E-4125-2018 | cs |
dc.identifier.researcherid | E-3698-2018 | cs |
dc.identifier.scopus | 6603672687 | cs |
dc.identifier.scopus | 6506028849 | cs |
dc.identifier.uri | http://hdl.handle.net/11012/193102 | |
dc.language.iso | en | cs |
dc.publisher | Hindawi | cs |
dc.relation.ispartof | MATHEMATICAL PROBLEMS IN ENGINEERING | cs |
dc.relation.uri | http://dx.doi.org/10.1155/2018/1747865 | cs |
dc.rights | Creative Commons Attribution 4.0 International | cs |
dc.rights.access | openAccess | cs |
dc.rights.sherpa | http://www.sherpa.ac.uk/romeo/issn/1024-123X/ | cs |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | cs |
dc.subject | pinched hysteresis | en |
dc.subject | memristor | en |
dc.subject | inverse memristor | en |
dc.subject | constitutive relation | en |
dc.subject | inductor | en |
dc.subject | capacitor | en |
dc.title | About v-i Pinched Hysteresis of Some Non-Memristive Systems | en |
dc.type.driver | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
sync.item.dbid | VAV-150098 | en |
sync.item.dbtype | VAV | en |
sync.item.insts | 2025.02.03 15:39:00 | en |
sync.item.modts | 2025.01.17 16:42:58 | en |
thesis.grantor | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav radioelektroniky | cs |
thesis.grantor | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektroniky | cs |
thesis.grantor | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Centrum senzorických, informačních a komunikačních systémů | cs |
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