Unbalanced Czarnul Resistive MOS Circuit in the Symmetrical MOSFET-C Filters

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dc.contributor.authorUrbas, A.
dc.contributor.authorGalinski, B.
dc.coverage.issue3cs
dc.coverage.volume5cs
dc.date.accessioned2016-05-06T10:23:13Z
dc.date.available2016-05-06T10:23:13Z
dc.date.issued1996-09cs
dc.description.abstractThe analysis of influence of mismatches of the MOS transistor array on center frequency ω0 and Q-factor of the MOSFET-C filter poles is performed. As a useful parameter characterizing mismatches of transistors, the dispersion of the threshold voltage VT and transconductance K per unit area in the VLSI process is considered The optimal formula for the control gate voltages VG1, VG2 of MOS transistors, minimizing the absolute errors of ω0 , Q parameters is given.en
dc.formattextcs
dc.format.extent23-26cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 1996, vol. 5, č. 3, s. 23-26. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/58421
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/1996/96_03_06.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectMOS filters designen
dc.subjectMOS resistive circuitsen
dc.titleUnbalanced Czarnul Resistive MOS Circuit in the Symmetrical MOSFET-C Filtersen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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