Unbalanced Czarnul Resistive MOS Circuit in the Symmetrical MOSFET-C Filters

Abstract

The analysis of influence of mismatches of the MOS transistor array on center frequency ω0 and Q-factor of the MOSFET-C filter poles is performed. As a useful parameter characterizing mismatches of transistors, the dispersion of the threshold voltage VT and transconductance K per unit area in the VLSI process is considered The optimal formula for the control gate voltages VG1, VG2 of MOS transistors, minimizing the absolute errors of ω0 , Q parameters is given.