Modeling the AgInSbTe Memristor
| dc.contributor.author | Yu, Juntang | |
| dc.contributor.author | Li, Yi | |
| dc.contributor.author | Mu, Xiaomu | |
| dc.contributor.author | Zhang, Jinjian | |
| dc.contributor.author | Miao, Xiangshui | |
| dc.contributor.author | Wang, Shuning | |
| dc.coverage.issue | 3 | cs |
| dc.coverage.volume | 24 | cs |
| dc.date.accessioned | 2015-10-26T08:05:46Z | |
| dc.date.available | 2015-10-26T08:05:46Z | |
| dc.date.issued | 2015-09 | cs |
| dc.description.abstract | The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data. | en |
| dc.format | text | cs |
| dc.format.extent | 808-813 | cs |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Radioengineering. 2015 vol. 24, č. 3, s. 808-813. ISSN 1210-2512 | cs |
| dc.identifier.doi | 10.13164/re.2015.0808 | en |
| dc.identifier.issn | 1210-2512 | |
| dc.identifier.uri | http://hdl.handle.net/11012/51749 | |
| dc.language.iso | en | cs |
| dc.publisher | Společnost pro radioelektronické inženýrství | cs |
| dc.relation.ispartof | Radioengineering | cs |
| dc.relation.uri | http://www.radioeng.cz/fulltexts/2015/15_03_0808_0813.pdf | cs |
| dc.rights | Creative Commons Attribution 3.0 Unported License | en |
| dc.rights.access | openAccess | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
| dc.subject | Memristor | en |
| dc.subject | mathematical model | en |
| dc.subject | piecewise linear | en |
| dc.title | Modeling the AgInSbTe Memristor | en |
| dc.type.driver | article | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |
| eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |
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