Modeling the AgInSbTe Memristor
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Date
2015-09
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Advisor
Referee
Mark
Journal Title
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Volume Title
Publisher
Společnost pro radioelektronické inženýrství
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Abstract
The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data.
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Citation
Radioengineering. 2015 vol. 24, č. 3, s. 808-813. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2015/15_03_0808_0813.pdf
http://www.radioeng.cz/fulltexts/2015/15_03_0808_0813.pdf
Document type
Peer-reviewed
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en