Amorphous boron nitride: synthesis, properties and device application

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dc.contributor.authorSattari-Esfahlan, Seyed Mehdics
dc.contributor.authorMirzaei, Saeedcs
dc.contributor.authorJosline, Mukkath Josephcs
dc.contributor.authorMoon, Ji-Yuncs
dc.contributor.authorHyun, Sang-Hwacs
dc.contributor.authorJang, Houkcs
dc.contributor.authorLee, Jae-Hyuncs
dc.coverage.issue1cs
dc.coverage.volume12cs
dc.date.accessioned2025-07-18T13:56:26Z
dc.date.available2025-07-18T13:56:26Z
dc.date.issued2025-05-02cs
dc.description.abstractAmorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies.en
dc.formattextcs
dc.format.extent22cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNano Convergence. 2025, vol. 12, issue 1, 22 p.en
dc.identifier.doi10.1186/s40580-025-00486-1cs
dc.identifier.issn2196-5404cs
dc.identifier.orcid0000-0002-1905-4741cs
dc.identifier.other198117cs
dc.identifier.urihttps://hdl.handle.net/11012/255207
dc.language.isoencs
dc.publisherSPRINGERcs
dc.relation.ispartofNano Convergencecs
dc.relation.urihttps://nanoconvergencejournal.springeropen.com/articles/10.1186/s40580-025-00486-1cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2196-5404/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectsingle-photon emissionen
dc.subjectthin-filmsen
dc.subjectoptical-propertiesen
dc.subjectpoint-defectsen
dc.subjectgrapheneen
dc.subjectgrowthen
dc.subjecttransparenten
dc.subjecttemperatureen
dc.subjectdepositionen
dc.subjectcrystallineen
dc.titleAmorphous boron nitride: synthesis, properties and device applicationen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.grantNumberinfo:eu-repo/grantAgreement/MSM/LM/LM2023051cs
sync.item.dbidVAV-198117en
sync.item.dbtypeVAVen
sync.item.insts2025.07.18 15:56:26en
sync.item.modts2025.07.18 15:33:06en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
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