Amorphous boron nitride: synthesis, properties and device application
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Date
2025-05-02
Authors
Sattari-Esfahlan, Seyed Mehdi
Mirzaei, Saeed
Josline, Mukkath Joseph
Moon, Ji-Yun
Hyun, Sang-Hwa
Jang, Houk
Lee, Jae-Hyun
ORCID
0000-0002-1905-4741Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
SPRINGER
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Abstract
Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies.
Description
Citation
Nano Convergence. 2025, vol. 12, issue 1, 22 p.
https://nanoconvergencejournal.springeropen.com/articles/10.1186/s40580-025-00486-1
https://nanoconvergencejournal.springeropen.com/articles/10.1186/s40580-025-00486-1
Document type
Peer-reviewed
Document version
Published version
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Language of document
en