A Memristor as Multi-Bit Memory: Feasibility Analysis
| dc.contributor.author | Bass, Ori | |
| dc.contributor.author | Fish, Alexander | |
| dc.contributor.author | Naveh, Doron | |
| dc.coverage.issue | 2 | cs |
| dc.coverage.volume | 24 | cs |
| dc.date.accessioned | 2015-06-29T11:33:40Z | |
| dc.date.available | 2015-06-29T11:33:40Z | |
| dc.date.issued | 2015-06 | cs |
| dc.description.abstract | The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristors-based multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell, lay grounds for full integration of memristor multi-bit memory cell. | en |
| dc.format | text | cs |
| dc.format.extent | 425-430 | cs |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Radioengineering. 2015 vol. 24, č. 2, s. 425-430. ISSN 1210-2512 | cs |
| dc.identifier.doi | 10.13164/re.2015.0425 | en |
| dc.identifier.issn | 1210-2512 | |
| dc.identifier.uri | http://hdl.handle.net/11012/41843 | |
| dc.language.iso | en | cs |
| dc.publisher | Společnost pro radioelektronické inženýrství | cs |
| dc.relation.ispartof | Radioengineering | cs |
| dc.relation.uri | http://www.radioeng.cz/fulltexts/2015/15_02_0425_0430.pdf | cs |
| dc.rights | Creative Commons Attribution 3.0 Unported License | en |
| dc.rights.access | openAccess | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
| dc.subject | Memristor | en |
| dc.subject | multi-bit memory | en |
| dc.subject | noise margin | en |
| dc.title | A Memristor as Multi-Bit Memory: Feasibility Analysis | en |
| dc.type.driver | article | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |
| eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |