A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

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Háze, Jiří
Hofman, Jiří

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Mark

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FEI STU Bratislava
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Abstract

The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.
The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

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Journal of Electrical Engineering-Elektrotechnicky Casopis. 2019, vol. 70, issue 3, p. 227-235.
http://iris.elf.stuba.sk/JEEEC/data/pdf/3_119-06.pdf

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Peer-reviewed

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en

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Except where otherwised noted, this item's license is described as Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
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