SPICE Model of Memristor with Nonlinear Dopant Drift
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Date
2009-06
ORCID
Advisor
Referee
Mark
Journal Title
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Publisher
Společnost pro radioelektronické inženýrství
Abstract
A mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, enabling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.
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Citation
Radioengineering. 2009, vol. 18, č. 2, s. 210-214. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2009/09_02_210_214.pdf
http://www.radioeng.cz/fulltexts/2009/09_02_210_214.pdf
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Peer-reviewed
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Published version
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en