SPICE Model of Memristor with Nonlinear Dopant Drift

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dc.contributor.authorBiolek, Zdenek
dc.contributor.authorBiolek, Dalibor
dc.contributor.authorBiolkova, Viera
dc.coverage.issue2cs
dc.coverage.volume18cs
dc.date.accessioned2016-03-17T14:04:30Z
dc.date.available2016-03-17T14:04:30Z
dc.date.issued2009-06cs
dc.description.abstractA mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, enabling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.en
dc.formattextcs
dc.format.extent210-214cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2009, vol. 18, č. 2, s. 210-214. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/57100
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2009/09_02_210_214.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectMemristoren
dc.subjectdriften
dc.subjectwindow functionen
dc.subjectSPICEen
dc.titleSPICE Model of Memristor with Nonlinear Dopant Driften
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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