Downsizing the Channel Length of Vertical Organic Electrochemical Transistors

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dc.contributor.authorBrodský, Jancs
dc.contributor.authorGablech, Imrichcs
dc.contributor.authorMigliaccio, Ludovicocs
dc.contributor.authorHavlíček, Marekcs
dc.contributor.authorDonahue, Marycs
dc.contributor.authorGlowacki, Eric Danielcs
dc.coverage.issue22cs
dc.coverage.volume15cs
dc.date.issued2023-05-22cs
dc.description.abstractOrganic electrochemical transistors (OECTs) are promising building blocks for bioelectronic devices such as While the majority of OECTs use simple planar geometry, there is interest in exploring how these devices operate with much shorter channels on the submicron scale. Here, we show a practical route toward the minimization of the channel length of the transistor using traditional photolithography, enabling large-scale utilization. We describe the fabrication of such transistors using two types of conducting polymers. First, commercial solution-processed poly(dioxyethylenethiophene):poly(styrene sulfonate), PEDOT:PSS. Next, we also exploit the short channel length to support easy in situ electropolymerization of poly(dioxyethylenethiophene):tetrabutyl ammonium hexafluorophosphate, PEDOT:PF6. Both variants show different promising features, leading the way in terms of transconductance (gm), with the measured peak gm up to 68 mS for relatively thin (280 nm) channel layers on devices with the channel length of 350 nm and with widths of 50, 100, and 200 m. This result suggests that the use of electropolymerized semiconductors, which can be easily customized, is viable with vertical geometry, as uniform and thin layers can be created. Spin-coated PEDOT:PSS lags behind with the lower values of gm; however, it excels in terms of the speed of the device and also has a comparably lower off current (300 nA), leading to unusually high on/off ratio, with values up to 8.6 × 104. Our approach to vertical gap devices is simple, scalable, and can be extended to other applications where small electrochemical channels are desired.en
dc.formattextcs
dc.format.extent27002-27009cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationACS APPL MATER INTER. 2023, vol. 15, issue 22, p. 27002-27009.en
dc.identifier.doi10.1021/acsami.3c02049cs
dc.identifier.issn1944-8244cs
dc.identifier.orcid0000-0002-5656-3158cs
dc.identifier.orcid0000-0003-4218-1287cs
dc.identifier.orcid0000-0002-1944-6067cs
dc.identifier.orcid0000-0002-0280-8017cs
dc.identifier.other183716cs
dc.identifier.researcheridGYJ-6288-2022cs
dc.identifier.researcheridH-7835-2016cs
dc.identifier.scopus57212587388cs
dc.identifier.scopus55091127400cs
dc.identifier.urihttp://hdl.handle.net/11012/213672
dc.language.isoencs
dc.publisherAmerican Chemical Societycs
dc.relation.ispartofACS APPL MATER INTERcs
dc.relation.urihttps://pubs.acs.org/doi/full/10.1021/acsami.3c02049cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1944-8244/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectvertical organic electrochemical transistoren
dc.subjectmicrofabricationen
dc.subjectPEDOTen
dc.subjectelectrochemical polymerizationen
dc.titleDownsizing the Channel Length of Vertical Organic Electrochemical Transistorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-183716en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:39:15en
sync.item.modts2025.01.17 16:40:14en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-MEL-SIXcs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Bioelektronické materiály a systémycs
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