Simple and efficient AlN-based piezoelectric energy harvesters

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dc.contributor.authorGablech, Imrichcs
dc.contributor.authorKlempa, Jaroslavcs
dc.contributor.authorPekárek, Jancs
dc.contributor.authorVyroubal, Petrcs
dc.contributor.authorHrabina, Jancs
dc.contributor.authorHolá, Miroslavacs
dc.contributor.authorKunz, Jancs
dc.contributor.authorBrodský, Jancs
dc.contributor.authorNeužil, Pavelcs
dc.coverage.issue2cs
dc.coverage.volume11cs
dc.date.accessioned2020-08-04T11:00:00Z
dc.date.available2020-08-04T11:00:00Z
dc.date.issued2020-01-28cs
dc.description.abstractIn this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pCN1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of 330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.en
dc.formattextcs
dc.format.extent1-10cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationMicromachines. 2020, vol. 11, issue 2, p. 1-10.en
dc.identifier.doi10.3390/mi11020143cs
dc.identifier.issn2072-666Xcs
dc.identifier.other161587cs
dc.identifier.urihttp://hdl.handle.net/11012/186577
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofMicromachinescs
dc.relation.urihttps://www.mdpi.com/2072-666X/11/2/143cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2072-666X/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectAlNen
dc.subjectMEMS cantileveren
dc.subjectCMOS compatibleen
dc.subjectenergy harvestingen
dc.subjecthigh performanceen
dc.titleSimple and efficient AlN-based piezoelectric energy harvestersen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-161587en
sync.item.dbtypeVAVen
sync.item.insts2021.02.25 16:53:16en
sync.item.modts2021.02.25 16:13:48en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-MEL-SIXcs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-ETE-CVVOZEcs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs
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