Simple and efficient AlN-based piezoelectric energy harvesters

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dc.contributor.authorGablech, Imrichcs
dc.contributor.authorKlempa, Jaroslavcs
dc.contributor.authorPekárek, Jancs
dc.contributor.authorVyroubal, Petrcs
dc.contributor.authorHrabina, Jancs
dc.contributor.authorHolá, Miroslavacs
dc.contributor.authorKunz, Jancs
dc.contributor.authorBrodský, Jancs
dc.contributor.authorNeužil, Pavelcs
dc.coverage.issue2cs
dc.coverage.volume11cs
dc.date.issued2020-01-28cs
dc.description.abstractIn this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pCN1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of 330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.en
dc.formattextcs
dc.format.extent1-10cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationMicromachines. 2020, vol. 11, issue 2, p. 1-10.en
dc.identifier.doi10.3390/mi11020143cs
dc.identifier.issn2072-666Xcs
dc.identifier.orcid0000-0003-4218-1287cs
dc.identifier.orcid0000-0002-9857-1981cs
dc.identifier.orcid0000-0003-4160-8031cs
dc.identifier.orcid0000-0002-6917-7950cs
dc.identifier.orcid0000-0002-5656-3158cs
dc.identifier.other161587cs
dc.identifier.researcheridH-7835-2016cs
dc.identifier.researcheridD-7620-2012cs
dc.identifier.researcheridE-8103-2018cs
dc.identifier.researcheridE-1200-2017cs
dc.identifier.researcheridGYJ-6288-2022cs
dc.identifier.scopus55091127400cs
dc.identifier.scopus35173314700cs
dc.identifier.scopus56376348100cs
dc.identifier.scopus57212587388cs
dc.identifier.urihttp://hdl.handle.net/11012/186577
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofMicromachinescs
dc.relation.urihttps://www.mdpi.com/2072-666X/11/2/143cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2072-666X/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectAlNen
dc.subjectMEMS cantileveren
dc.subjectCMOS compatibleen
dc.subjectenergy harvestingen
dc.subjecthigh performanceen
dc.titleSimple and efficient AlN-based piezoelectric energy harvestersen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-161587en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:39:11en
sync.item.modts2025.01.17 18:39:25en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-ETE-CVVOZEcs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. oddělení-MEL-SIXcs
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