Improved Model of TiO2 Memristor
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Date
2015-06
Authors
Kolka, Zdenek
Biolek, Dalibor
Biolkova, Viera
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
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Abstract
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
Description
Citation
Radioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2015/15_02_0378_0383.pdf
http://www.radioeng.cz/fulltexts/2015/15_02_0378_0383.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en