Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations
Loading...
Date
2024-03-15
Authors
Bhardwaj, Kapil
Semenov, Dmitrii
Ĺ otner, Roman
Chen, Junrui
Carrara, Sandro
Srivastava, Mayank
ORCID
0000-0002-2430-1815Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Altmetrics
Abstract
The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit designers, enabling them to experiment with the diverse electrical characteristics of corresponding solid-state memristors. This article specifically focuses on the circuit-based emulation of silicon nanowire (SiNW) known for its effectiveness in biosensing applications. First, a fully floating memristor emulator has been presented based on a voltage differencing current conveyor (VDCC) and an operational transconductance amplifier (OTA)-controlled resistor, along with a grounded capacitance. Furthermore, the proposed memristor emulator was realized by employing integrated cells based on the discussed technology, and the simulation/experimental results are presented and analyzed. The experiments also confirmed the nonvolatile behavior of the realized memristor. The results demonstrate that the real-time implementation of the proposed emulator can accurately generate hysteretic behavior in both incremental and decremental memristive mode. Finally, the incremental and decremental pinched hysteresis loop (PHL) responses generated by the proposed emulator have been utilized to replicate the various types of memristive responses offered by SiNW by adding a simple extension to the circuit.
Description
Citation
IEEE SENSORS JOURNAL. 2024, vol. 24, issue 6, p. 8036-8044.
https://ieeexplore.ieee.org/document/10410212
https://ieeexplore.ieee.org/document/10410212
Document type
Peer-reviewed
Document version
Accepted version
Date of access to the full text
Language of document
en
Study field
Comittee
Date of acceptance
Defence
Result of defence
Document licence
(C) IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC