Asynchronous delta-sigma modulator in 28 nm FDSOI technology

Abstract

A novel solution of the first-order asynchronous delta-sigma modulator (ADSM) is proposed. The circuit designed for the commercial temperature range (0 degrees C to 70 degrees C) in a 28 nm fully depleted silicon on insulator (FD-SOI) technology from STMicroelectronics. This technology allows designing new subcircuit topologies, resulting in an ADSM that offers a 64.2 dB signal-to-noise and distortion ratio ( SNDR ) corresponding to 10.37-bit resolution in the signal bandwidth of 10 kHz. The ADSM consumes 4.1 mu W at a power supply of V, and the obtained power efficiency is 0.15 pJ/conversion. The ADSM occupies an area of only 0.0042 mm(2).A novel solution of the first-order asynchronous delta-sigma modulator (ADSM) is proposed. The circuit designed for the commercial temperature range (0 degrees C to 70 degrees C) in a 28 nm fully depleted silicon on insulator (FD-SOI) technology from STMicroelectronics. This technology allows designing new subcircuit topologies, resulting in an ADSM that offers a 64.2 dB signal-to-noise and distortion ratio ( SNDR ) corresponding to 10.37-bit resolution in the signal bandwidth of 10 kHz. The ADSM consumes 4.1 mu W at a power supply of V, and the obtained power efficiency is 0.15 pJ/conversion. The ADSM occupies an area of only 0.0042 mm(2).