A 2V, 32.13nA, fully MOSFET Voltage Limiter for Low Power Applications
dc.contributor.author | Rayat, H. | |
dc.contributor.author | Dastanian, R. | |
dc.coverage.issue | 3 | cs |
dc.coverage.volume | 31 | cs |
dc.date.accessioned | 2022-07-21T13:00:53Z | |
dc.date.available | 2022-07-21T13:00:53Z | |
dc.date.issued | 2022-09 | cs |
dc.description.abstract | This paper presents a fully MOSFET DC voltage limiter with low current consumption. In the proposed voltage reference structure to reduce power consumption, transistors are biased in the sub-threshold region. To generate complementary to absolute temperature (CTAT) voltage in the voltage reference circuit, only a PMOS transistor is used, in which its drain, gate, and source terminals are connected together and acts as a diode that reduces the layout area occupation. To further reduce power consumption, a part of the rectifier output voltage is compared with the reference voltage by the sampling circuit. Also, four stage inverters are used as buffers to provide the I-V limiting characteristic closer to the ideal situation. The use of series pass-gate transistors in the first inverter also reduces power consumption as much as possible. The results of post-layout simulation based on 0.18μm CMOS technology depict that the suggested voltage reference circuit has a reference voltage equivalent to 0.579V with a TC of 37.2ppm/℃ in the temperature range of -50°C to 50°C. LR and PSRR attained 0.008%/V and 45dB, respectively. The output voltage and current consumption of the limiter circuit are 2V and 32.13nA, respectively. The total layout area of the proposed limiter is 3249µm2. | en |
dc.format | text | cs |
dc.format.extent | 323-330 | cs |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Radioengineering. 2022 vol. 31, č. 3, s. 323-330. ISSN 1210-2512 | cs |
dc.identifier.doi | 10.13164/re.2022.0323 | en |
dc.identifier.issn | 1210-2512 | |
dc.identifier.uri | http://hdl.handle.net/11012/208191 | |
dc.language.iso | en | cs |
dc.publisher | Společnost pro radioelektronické inženýrství | cs |
dc.relation.ispartof | Radioengineering | cs |
dc.relation.uri | https://www.radioeng.cz/fulltexts/2022/22_03_0323_0330.pdf | cs |
dc.rights | Creative Commons Attribution 4.0 International license | en |
dc.rights.access | openAccess | en |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | en |
dc.subject | Limiter | en |
dc.subject | voltage reference | en |
dc.subject | temperature coefficient | en |
dc.subject | low power | en |
dc.subject | voltage sampler | en |
dc.subject | OPA | en |
dc.subject | buffer | en |
dc.title | A 2V, 32.13nA, fully MOSFET Voltage Limiter for Low Power Applications | en |
dc.type.driver | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |
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