Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
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Date
2005-12
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Mark
Journal Title
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Volume Title
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Společnost pro radioelektronické inženýrství
Abstract
A detailed analysis of the assembly influence on the small-signal parameters of a packaged transistor is presented. A new method, based on 3D field simulation and mixed-mode scattering parameters approach is proposed. Differences in scattering parameters caused by assembly change are computed using the new proposed method and compared to the standard method based on admittance matrix. The differences, accuracy, error sources and suitability of both methods are discussed. Results are verified experimentally in microstrip line for two fundamental assembly changes of a transistor in SOT 343 package in frequency range 45 MHz - 18 GHz.
Description
Citation
Radioengineering. 2005, vol. 14, č. 4, s. 75-80. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2005/05_04_075_080.pdf
http://www.radioeng.cz/fulltexts/2005/05_04_075_080.pdf
Document type
Peer-reviewed
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en