Electron beam directed etching of hexagonal boron nitride

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dc.contributor.authorElbadawi, Christophercs
dc.contributor.authorTran, Trong Toancs
dc.contributor.authorKolíbal, Miroslavcs
dc.contributor.authorŠikola, Tomášcs
dc.contributor.authorScott, Johncs
dc.contributor.authorCai, Qirancs
dc.contributor.authorLi, Lu Huacs
dc.contributor.authorTaniguchi, Takashics
dc.contributor.authorWatanabe, Kenjics
dc.contributor.authorToth, Miloscs
dc.contributor.authorAharonovich, Igorcs
dc.contributor.authorLobo, Charlenecs
dc.coverage.issue36cs
dc.coverage.volume8cs
dc.date.accessioned2021-12-10T11:52:17Z
dc.date.available2021-12-10T11:52:17Z
dc.date.issued2016-09-28cs
dc.description.abstractHexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.en
dc.description.abstractV našem článku popisujeme metody leptání heagonálního nitridu bóru (h-BN) elektronovým svazkemem za přítomnosti vodní páry.cs
dc.formattextcs
dc.format.extent16182-16186cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNanoscale. 2016, vol. 8, issue 36, p. 16182-16186.en
dc.identifier.doi10.1039/c6nr04959acs
dc.identifier.issn2040-3372cs
dc.identifier.other128626cs
dc.identifier.urihttp://hdl.handle.net/11012/203158
dc.language.isoencs
dc.publisherRoyal Society of Chemistrycs
dc.relation.ispartofNanoscalecs
dc.relation.urihttps://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959Acs
dc.rightsCreative Commons Attribution-NonCommercial 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2040-3372/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/cs
dc.subjectBoron Nitride; Electron Beam Etchingen
dc.subjectvan der Waals materialsen
dc.subjectNitrid bóru; Leptání elektronovým svazkem
dc.subjectvan der Waalsovy materiály
dc.titleElectron beam directed etching of hexagonal boron nitrideen
dc.title.alternativeLeptání hexagonálního nitridu bóru elektronovým svazkemcs
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-128626en
sync.item.dbtypeVAVen
sync.item.insts2021.12.10 12:52:17en
sync.item.modts2021.12.10 12:14:28en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. ÚFI-odbor fyziky pevných látek a povrchůcs
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ÚFI-odbor fyziky pevných látek a povrchů
Příprava a charakterizace nanostruktur