Electron beam directed etching of hexagonal boron nitride

Abstract
Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.
V našem článku popisujeme metody leptání heagonálního nitridu bóru (h-BN) elektronovým svazkemem za přítomnosti vodní páry.
Description
Citation
Nanoscale. 2016, vol. 8, issue 36, p. 16182-16186.
https://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959A
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en
Study field
Comittee
Date of acceptance
Defence
Result of defence
Document licence
Creative Commons Attribution-NonCommercial 4.0 International
http://creativecommons.org/licenses/by-nc/4.0/
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