Broadband Single-layer E-Patch Reflectarray

dc.contributor.authorLee, Shin-Rou
dc.contributor.authorLim, Eng-Hock
dc.contributor.authorLo, Fook-Loong
dc.coverage.issue1cs
dc.coverage.volume26cs
dc.date.accessioned2017-04-18T08:21:43Z
dc.date.available2017-04-18T08:21:43Z
dc.date.issued2017-04cs
dc.description.abstractE-shaped patch resonator is proposed for designing a novel broadband linearly polarized reflectarray for the first time. The element is made up of a shorted E-shaped patch with a polystyrene foam placed beneath it, and no dielectric substrate is needed in the reflectarray design. The unit element is simulated using Floquet method and it is found that a reflection phase range of ~360° is easily obtainable by varying the arm length of the shorted E-shaped patch. A full 11 × 11 reflectarray has been designed to achieve an antenna gain of ~23.7dBi and a -1dB gain bandwidth of 8.1%. The cross-polarization is found to be ~18dBi smaller than its co-polarization in the boresight direction. The proposed reflectarray is simple to design as it requires the use of only a single layer.en
dc.formattextcs
dc.format.extent97-106cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2017 vol. 26, č. 1, s. 97-106. ISSN 1210-2512cs
dc.identifier.doi10.13164/re.2017.0097en
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/64713
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2017/17_01_0097_0106.pdfcs
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectReflectarrayen
dc.subjectshorted E-shaped patchen
dc.subjectlinearly polarized reflectarrayen
dc.titleBroadband Single-layer E-Patch Reflectarrayen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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