Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

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dc.contributor.authorZiegelwanger, Tobiascs
dc.contributor.authorReisinger, Michaelcs
dc.contributor.authorMatoy, Kurtcs
dc.contributor.authorMedjahed, Asma Aichacs
dc.contributor.authorZálešák, Jakubcs
dc.contributor.authorGruber, Manuelcs
dc.contributor.authorMeindlhumer, Michaelcs
dc.contributor.authorKeckes, Jozefcs
dc.coverage.issue1cs
dc.coverage.volume181cs
dc.date.accessioned2025-04-04T11:56:55Z
dc.date.available2025-04-04T11:56:55Z
dc.date.issued2024-10-01cs
dc.description.abstractThin Silicon dies separated by laser dicing form a thin layer via redeposition of ablated silicon known as recast layer. This work analyzed the influence of the recast layer microstructure and nanoscale residual stress gradients on the bending strength of bare and metalized silicon dies <100 mu m. Scanning and transmission electron microscopy revealed an intricate microstructure of ablated silicon and elements of the wafer backside metallization within the recast layer. Refined silicon grains decorated by nanoscopic metallic precipitates at their grain boundaries were observed. Cross-sectional synchrotron X-ray nanodiffraction revealed that the altered microstructure increased the tensile residual stress from 200 to 295 MPa for bare and metalized dies, respectively. Additionally, the metalized die exhibited gradients in residual stress and grain size between the die front- and backside. Despite their similar frontside bending strengths of -340 MPa, observed in 3-point bending experiments, a considerable strengthening of the backside from 425 up to 957 MPa was measured for bare and metalized die, respectively. The origins of the tensile residual stress and the influence of the backside metallization on the die bending strength are discussed.en
dc.formattextcs
dc.format.extent1-11cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2024, vol. 181, issue 1, p. 1-11.en
dc.identifier.doi10.1016/j.mssp.2024.108579cs
dc.identifier.issn1369-8001cs
dc.identifier.other193657cs
dc.identifier.urihttps://hdl.handle.net/11012/250800
dc.language.isoencs
dc.publisherElseviercs
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGcs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S136980012400475Xcs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1369-8001/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectUltra -thin Si diesen
dc.subjectNanosecond laser dicingen
dc.subjectX-ray nanodiffractionen
dc.subjectLocal residual stressesen
dc.subjectDie bending strengthen
dc.titleBackside metallization affects residual stress and bending strength of the recast layer in laser-diced Sien
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-193657en
sync.item.dbtypeVAVen
sync.item.insts2025.04.04 13:56:55en
sync.item.modts2025.04.02 14:32:07en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
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