Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors

dc.contributor.authorPetržela, Jiřícs
dc.coverage.issue8cs
dc.coverage.volume11cs
dc.date.issued2021-04-07cs
dc.description.abstractThis paper is focused on the investigation of self-oscillation regimes associated with very simple structure of lambda diode. This building block is constructed by using coupled generalized bipolar transistors. In the stage of mathematical modeling, each transistor is considered as two-port de-scribed by full admittance matrix with scalar polynomial forward trans-conductance and linear backward trans-conductance. Thorough numerical analysis including routines of dynamical flow quantification indicate the existence of self-excited dense strange attractors. Plots showing first two Lyapunov exponents as functions of adjustable parameters, signal entropy calculated from gen-erated time sequence, sensitivity analysis, and other results are provided in this paper. By the construction of a flow-equivalent chaotic oscillator, robustness and long-time geometrical sta-bility of the generated chaotic attractors is documented by the experimental measurement, namely by showing captured oscilloscope screenshots.en
dc.description.abstractThis paper is focused on the investigation of self-oscillation regimes associated with very simple structure of lambda diode. This building block is constructed by using coupled generalized bipolar transistors. In the stage of mathematical modeling, each transistor is considered as two-port de-scribed by full admittance matrix with scalar polynomial forward trans-conductance and linear backward trans-conductance. Thorough numerical analysis including routines of dynamical flow quantification indicate the existence of self-excited dense strange attractors. Plots showing first two Lyapunov exponents as functions of adjustable parameters, signal entropy calculated from gen-erated time sequence, sensitivity analysis, and other results are provided in this paper. By the construction of a flow-equivalent chaotic oscillator, robustness and long-time geometrical sta-bility of the generated chaotic attractors is documented by the experimental measurement, namely by showing captured oscilloscope screenshots.en
dc.formattextcs
dc.format.extent3326-3347cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationApplied Sciences-Basel. 2021, vol. 11, issue 8, p. 3326-3347.en
dc.identifier.doi10.3390/app11083326cs
dc.identifier.issn2076-3417cs
dc.identifier.orcid0000-0001-5286-9574cs
dc.identifier.other171114cs
dc.identifier.researcheridDZG-2188-2022cs
dc.identifier.scopus9333762000cs
dc.identifier.urihttp://hdl.handle.net/11012/196758
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofApplied Sciences-Baselcs
dc.relation.urihttps://www.mdpi.com/2076-3417/11/8/3326cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2076-3417/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectadmittance parametersen
dc.subjectchaotic oscillatoren
dc.subjectlambda diodeen
dc.subjectLyapunov exponentsen
dc.subjectstrange attractorsen
dc.subjectvector fielden
dc.subjectadmittance parameters
dc.subjectchaotic oscillator
dc.subjectlambda diode
dc.subjectLyapunov exponents
dc.subjectstrange attractors
dc.subjectvector field
dc.titleChaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistorsen
dc.title.alternativeChaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-171114en
sync.item.dbtypeVAVen
sync.item.insts2025.10.14 14:11:23en
sync.item.modts2025.10.14 09:38:06en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav radioelektronikycs

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
applsci1103326v2.pdf
Size:
0 B
Format:
Adobe Portable Document Format
Description:
applsci1103326v2.pdf