Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition
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Date
2018-10-01
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Mark
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MDPI
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Abstract
Sequentially pulsed chemical vapour deposition was used to successfully deposit thin
nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to
investigate their application to UV optoelectronics. The films were deposited at 125 degrees C using
[Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine
hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron
spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of
aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental
degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were
found to be organic materials from the precursor. Photoluminescence showed the characteristic free
and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be
detected by reflectance measurements.
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Peer-reviewed
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en