Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

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dc.contributor.authorChobola, Zdeněkcs
dc.contributor.authorLuňák, Miroslavcs
dc.contributor.authorVaněk, Jiřícs
dc.contributor.authorHulicius, Eduardcs
dc.contributor.authorKusák, Ivocs
dc.coverage.issue4cs
dc.coverage.volume66cs
dc.date.issued2015-08-01cs
dc.description.abstractThe paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.en
dc.description.abstractThe paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.en
dc.formattextcs
dc.format.extent226-230cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationJournal of Electrical Engineering-Elektrotechnicky Casopis. 2015, vol. 66, issue 4, p. 226-230.en
dc.identifier.doi10.2478/jee-2015-0036cs
dc.identifier.issn1335-3632cs
dc.identifier.orcid0000-0002-8604-7162cs
dc.identifier.orcid0000-0001-9334-2920cs
dc.identifier.orcid0000-0003-1195-4507cs
dc.identifier.orcid0000-0002-9919-3484cs
dc.identifier.other117577cs
dc.identifier.researcheridA-6595-2016cs
dc.identifier.scopus23003716600cs
dc.identifier.scopus7005452820cs
dc.identifier.scopus55569760200cs
dc.identifier.urihttp://hdl.handle.net/11012/84115
dc.language.isoencs
dc.publisherFaculty of Electrical Engineering and Information Technology of the Slovak University of Technologycs
dc.relation.ispartofJournal of Electrical Engineering-Elektrotechnicky Casopiscs
dc.relation.urihttps://content.sciendo.com/view/journals/jee/66/4/article-p226.xmlcs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1335-3632/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cs
dc.subjectmolecular beam epitaxyen
dc.subjectexcess noiseen
dc.subjectlasers diodesen
dc.subjectmolecular beam epitaxy
dc.subjectexcess noise
dc.subjectlasers diodes
dc.titleLow-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxyen
dc.title.alternativeLow-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxyen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-117577en
sync.item.dbtypeVAVen
sync.item.insts2025.10.14 14:09:47en
sync.item.modts2025.10.14 09:54:58en
thesis.grantorVysoké učení technické v Brně. Fakulta stavební. Ústav fyzikycs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav elektrotechnologiecs

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