Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier
dc.contributor.author | Srivastava, Richa | |
dc.contributor.author | Gupta, Maneesha | |
dc.contributor.author | Singh, Urvashi | |
dc.coverage.issue | 4 | cs |
dc.coverage.volume | 23 | cs |
dc.date.accessioned | 2014-12-16T09:35:39Z | |
dc.date.available | 2014-12-16T09:35:39Z | |
dc.date.issued | 2014-12 | cs |
dc.description.abstract | This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation of the multiplier allows low voltage operation, reduced power consumption and minimum transistor count. The second order effects caused due to mobility degradation, component mismatch and temperature variations are discussed. Performance of the proposed circuit is verified at ±0.75 V in TSMC 0.18 µm CMOS, BSIM3 and Level 49 technology by using Cadence Spectre simulator. | en |
dc.format | text | cs |
dc.format.extent | 1150-1160 | cs |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Radioengineering. 2014, vol. 23, č. 4, s. 1150-1160. ISSN 1210-2512 | cs |
dc.identifier.issn | 1210-2512 | |
dc.identifier.uri | http://hdl.handle.net/11012/36573 | |
dc.language.iso | en | cs |
dc.publisher | Společnost pro radioelektronické inženýrství | cs |
dc.relation.ispartof | Radioengineering | cs |
dc.relation.uri | http://www.radioeng.cz/fulltexts/2014/14_04_1150_1160.pdf | cs |
dc.rights | Creative Commons Attribution 3.0 Unported License | en |
dc.rights.access | openAccess | en |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
dc.subject | FGMOS | en |
dc.subject | low-voltage | en |
dc.subject | low-power | en |
dc.subject | four-quadrant | en |
dc.subject | multiplier. | en |
dc.title | Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier | en |
dc.type.driver | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |