Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

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but.event.date29.04.2025cs
but.event.titleSTUDENT EEICT 2025cs
dc.contributor.authorTomíček, Pavel
dc.contributor.authorBoušek, Jaroslav
dc.date.accessioned2025-07-30T10:00:58Z
dc.date.available2025-07-30T10:00:58Z
dc.date.issued2025cs
dc.description.abstractThis paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.en
dc.formattextcs
dc.format.extent266-270cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings I of the 31st Conference STUDENT EEICT 2025: General papers. s. 266-270. ISBN 978-80-214-6321-9cs
dc.identifier.isbn978-80-214-6321-9
dc.identifier.urihttps://hdl.handle.net/11012/255296
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings I of the 31st Conference STUDENT EEICT 2025: General papersen
dc.relation.urihttps://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdfcs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectMOSFETen
dc.subjectgate oxide reliabilityen
dc.subjectlifetimeen
dc.subjectgate boostingen
dc.titleEffects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETsen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs

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