Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs
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Tomíček, Pavel
Boušek, Jaroslav
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
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Abstract
This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.
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Proceedings I of the 31st Conference STUDENT EEICT 2025: General papers. s. 266-270. ISBN 978-80-214-6321-9
https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf
https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf
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Peer-reviewed
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en