Theoretical Model of the Bistable Semiconductor Laser Diode Based on the Rate Equations

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dc.contributor.authorJerabek, Vitezslav
dc.contributor.authorHuettel, Ivan
dc.coverage.issue2cs
dc.coverage.volume20cs
dc.date.accessioned2016-02-29T13:46:27Z
dc.date.available2016-02-29T13:46:27Z
dc.date.issued2011-06cs
dc.description.abstractThe paper describes theoretical and experimental results that enabled the authors to proof optical bistability behavior of a specially modified bistable semiconductor laser diode (BLD) created on a structure with a saturable absorption section. A mathematical model of the light-current characteristic, condition for bistability and the basic parameters of the hysteresis loop were derived by solving a system of three rate equations. That system was used for simulation of the light-current characteristic and conditions of bistability of the realized BLDs. For selected operating points of the simulated light-current characteristic the parameters of hysteresis loop and element values of the BLD electrical equivalent circuit for small signal variations were calculated. The bistability was experimentally measured by the new time method devised for impulse bistability verification (IBV). The basic measured and calculated parameters of the hysteresis loop of the BLD light-current characteristic were compared.en
dc.formattextcs
dc.format.extent486-492cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2011, vol. 20, č. 2, s. 486-492. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/56864
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2011/11_02_486_492.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectOptical bistabilityen
dc.subjectbistable semiconductor laser diodeen
dc.subjectrate equationen
dc.titleTheoretical Model of the Bistable Semiconductor Laser Diode Based on the Rate Equationsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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