Morphological Structure Of Solar Cells Based On Silicon And Gallium Arsenide After Ion Etching

but.event.date26.04.2018cs
but.event.titleStudent EEICT 2018cs
dc.contributor.authorPapež, Nikola
dc.date.accessioned2019-03-04T10:05:57Z
dc.date.available2019-03-04T10:05:57Z
dc.date.issued2018cs
dc.description.abstractStudy deals with the investigation of the surface after ion etching on two types of solar cells – based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.en
dc.formattextcs
dc.format.extent513-517cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 24th Conference STUDENT EEICT 2018. s. 513-517. ISBN 978-80-214-5614-3cs
dc.identifier.isbn978-80-214-5614-3
dc.identifier.urihttp://hdl.handle.net/11012/138287
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 24th Conference STUDENT EEICT 2018en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectRIEen
dc.subjectGaAsen
dc.subjectSien
dc.subjection bombardmenten
dc.subjectEDXen
dc.subjectSEMen
dc.subjectAFMen
dc.titleMorphological Structure Of Solar Cells Based On Silicon And Gallium Arsenide After Ion Etchingen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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