Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect

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dc.contributor.authorAcharyya, Aritra
dc.contributor.authorBanerjee, Suranjana
dc.contributor.authorBanerjee, J. P.
dc.coverage.issue4cs
dc.coverage.volume21cs
dc.date.accessioned2015-01-26T10:06:04Z
dc.date.available2015-01-26T10:06:04Z
dc.date.issued2012-12cs
dc.description.abstractIn this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal simulation method based on non-sinusoidal voltage excitation incorporating the transient thermal effect has been developed by the authors. Results show that the device is capable of delivering a peak pulsed power output of 17.5 W with 12.8% efficiency when the voltage modulation is 60%. The maximum junction temperature rise is 350.2 K for a peak pulsed bias current of 6.79 A with 100 ns pulsewidth and 0.5 percent duty cycle; whereas the chirp bandwidth is 8.3 GHz.en
dc.formattextcs
dc.format.extent1218-1225cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2012, vol. 21, č. 4, s. 1218-1225. ISSN 1210-2512cs
dc.identifier.issn1210-2512cs
dc.identifier.urihttp://hdl.handle.net/11012/37232
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectChirp bandwidthen
dc.subjectfrequency chirpingen
dc.subjectlarge-signal simulationen
dc.subjectpulsed DDR IMPATTen
dc.subjecttemperature transients.en
dc.titleLarge-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effecten
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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