Fast response hydrogen microsensor based on semiconductor niobium-oxide nanostructures via smart anodizing of Al/Nb metal layers

dc.contributor.authorVazquez, Rosa Mariacs
dc.contributor.authorMozalev, Alexandercs
dc.contributor.authorLlobet, Eduardcs
dc.coverage.issue-cs
dc.coverage.volume87cs
dc.date.issued2014-12-31cs
dc.description.abstractNanostructured niobium oxide semiconductor is gaining increasing attention as electro-optic and gas sensing material. However, the preparation of stable niobium oxide nanofilm with reproducible morphology and behaviour remains a challenge. Here we describe a rapid and well-controlled approach to synthesize a niobium oxide film with the columnlike nanostructured morphology via anodic processing of Al/Nb metal layers sputtered onto an oxide-coated Si wafer. The film is developed due to the growth of a nanoporous anodic alumina layer followed by pore-directed oxidation of the Nb underlayer. The post-anodizing treatment results in the controlled formation of Nb2O5 crystal phase, which causes the transformation from dielectric to n-type semiconductor behavior of the film. A laboratory gas sensor fabricated by uniting the anodizing approach developed here with standard micromachining technologies shows superior characteristics for hydrogen gas detection, the response-recovery time being among best ever reporteden
dc.description.abstractNanostructured niobium oxide semiconductor is gaining increasing attention as electro-optic and gas sensing material. However, the preparation of stable niobium oxide nanofilm with reproducible morphology and behaviour remains a challenge. Here we describe a rapid and well-controlled approach to synthesize a niobium oxide film with the columnlike nanostructured morphology via anodic processing of Al/Nb metal layers sputtered onto an oxide-coated Si wafer. The film is developed due to the growth of a nanoporous anodic alumina layer followed by pore-directed oxidation of the Nb underlayer. The post-anodizing treatment results in the controlled formation of Nb2O5 crystal phase, which causes the transformation from dielectric to n-type semiconductor behavior of the film. A laboratory gas sensor fabricated by uniting the anodizing approach developed here with standard micromachining technologies shows superior characteristics for hydrogen gas detection, the response-recovery time being among best ever reporteden
dc.formattextcs
dc.format.extent811-814cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationProcedia Engineering. 2014, vol. 87, issue -, p. 811-814.en
dc.identifier.doi10.1016/j.proeng.2014.11.674cs
dc.identifier.isbn978-1-5108-0586-6cs
dc.identifier.issn1877-7058cs
dc.identifier.orcid0000-0002-9505-5359cs
dc.identifier.other111098cs
dc.identifier.researcheridH-3928-2012cs
dc.identifier.scopus6601972151cs
dc.identifier.urihttp://hdl.handle.net/11012/194753
dc.language.isoencs
dc.publisherElseviercs
dc.relation.ispartofProcedia Engineeringcs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S1877705814027969cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1877-7058/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cs
dc.subjectniobium oxideen
dc.subjectanodizingen
dc.subjectporous aluminaen
dc.subjectnanostructureen
dc.subjecthydrogen sensoren
dc.subjectniobium oxide
dc.subjectanodizing
dc.subjectporous alumina
dc.subjectnanostructure
dc.subjecthydrogen sensor
dc.titleFast response hydrogen microsensor based on semiconductor niobium-oxide nanostructures via smart anodizing of Al/Nb metal layersen
dc.title.alternativeFast response hydrogen microsensor based on semiconductor niobium-oxide nanostructures via smart anodizing of Al/Nb metal layersen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-111098en
sync.item.dbtypeVAVen
sync.item.insts2025.10.14 15:16:37en
sync.item.modts2025.10.14 10:13:23en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Chytré nanonástrojecs

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