An Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systems

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dc.contributor.authorDuy Manh Luong
dc.contributor.authorXuan Nam Tran
dc.coverage.issue4cs
dc.coverage.volume29cs
dc.date.accessioned2021-04-30T12:26:28Z
dc.date.available2021-04-30T12:26:28Z
dc.date.issued2020-12cs
dc.description.abstractIn this paper, a design of 3-stacked GaN highelectron-mobility transistor radio-frequency power amplifier employing an independently biased technique is presented to meet stringent requirements of next-generation wireless communication systems. The ability of independently adjusting operation conditions for each transistor of the proposed amplifier makes it possible to operate not only for high efficiency, high linearity but also for both improved efficiency and linearity. Efficiency can be optimized through varying drain bias voltages. Linearity, however, can be optimized independently through varying gate bias voltages. Importantly, both efficiency and linearity can be optimized simultaneously by making a compromise between drain and gate bias voltages. In contrast to conventional methods, the proposed configuration still ensures a compact size for design of the power amplifier. This can be feasible because the proposed solution is introduced in the device level using a MMIC technology. These superior advantages make the proposed PA a promising candidate for using in transceiver of the next-generation wireless communications systems.en
dc.formattextcs
dc.format.extent617-624cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2020 vol. 29, č. 4, s. 617-624. ISSN 1210-2512cs
dc.identifier.doi10.13164/re.2020.0617en
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/196616
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttps://www.radioeng.cz/fulltexts/2020/20_04_0617_0624.pdfcs
dc.rightsCreative Commons Attribution 4.0 International licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectPower amplifieren
dc.subjectGaN HEMTen
dc.subjectindependently biaseden
dc.subjectIMD3en
dc.subjectlinearityen
dc.subjectefficiencyen
dc.titleAn Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systemsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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