0.3-V Nanopower Biopotential Low-Pass Filter
Loading...
Files
Date
Authors
Kulej, Tomasz
Khateb, Fabian
Kumngern, Montree
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
ORCID
Altmetrics
Abstract
This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.
This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.
This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.
Description
Keywords
Citation
IEEE Access. 2020, vol. 8, issue 1, IF: 3.745, p. 119586-119593.
https://ieeexplore.ieee.org/document/9127961
https://ieeexplore.ieee.org/document/9127961
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en
Study field
Comittee
Date of acceptance
Defence
Result of defence
Collections
Endorsement
Review
Supplemented By
Referenced By
Creative Commons license
Except where otherwised noted, this item's license is described as Creative Commons Attribution 4.0 International

0000-0002-9864-9830 